Computational Modeling of Electron Transport through Si- and C-Based Nanojunctions

  • Event Date: 2021-10-25
  • Computational quantum materials
  • Speaker: Prof. Chao-Cheng Kaun  /  Host: Prof. Feng-Chuan Chuang
    Place: Online Seminar

Title: Computational Modeling of Electron Transport through Si- and C-Based Nanojunctions

Time: 15:10-16:10, Monday, 2021/10/25

The link for the online seminar : 
Google Meet joining info
https://meet.google.com/htj-dwhd-zpz

Abstract:

Using first-principles calculations based on density functional theory and non-equilibrium Green’s function formalism, we investigate the interfacial-dependent leakage currents in the Cu/α-cristobalite/Cu junctions and negative differential resistance (NDR) in the C70/C60 heterojunction nanowires on Si(110). Our results show that the oxygen-rich interfaces form the lowest-leakage-current junction under small bias voltages, followed by the silicon-rich and oxygen-poor ones. We also suggest that the experimentally observed NDR of C70/C60 heterojunction nanowires on Si(110) is mainly due to the bias-dependent transmission through the weakly-coupled C70 channels.

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