Competing Weak Localization and Weak Antilocalization in a-InGaZnO Thin-Film Transistors
We report on the low-temperature magnetoconductivity of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be controlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference and spin–orbit coupling effect in the electron systems in a-IGZO TFTs, which suggests possible avenues for future applications in nanoelectronics and spintronics.
